![]() ![]() Power Transistor BJT works in four regions of operation they are NPN-power-transistor-construction Operation of Power Transistor Where the emitter terminal is connected to highly doped n-type layer, below which a moderately doped p-layer of 1016 cm-3 concentration is present, and a lightly doped n- layer of 1014 cm-3 concentration, which is also named as collector drift region, where the collector drift region decides the break-over voltage of the device and at the bottom, it has an n+ layer which is highly doped n-type layer of 1019 cm-3 concentration, where the collector is etched away for user interface. The following construction shows a P-N-P type, which consists of three terminals emitter, base, and collector. It can be designed using P-N-P or an N-P-N transistor. The Power Transistor BJT is a vertically oriented device having a large area of cross-sectional with alternate P and N-type layers are connected together.
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